Technical parameters/rated power: 74 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 2.8 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 74 W
Technical parameters/threshold voltage: 2.1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 100A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 2400pF @30V(Vds)
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PG-TDSON-8
External dimensions/length: 5.9 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.27 mm
External dimensions/packaging: PG-TDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Synchronous rectification, Isolated DC-DC converters, Or-ing switches
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSC014N06NSATMA1
|
Infineon | 类似代替 | PG-TDSON-8 |
INFINEON BSC014N06NSATMA1 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
|
||
BSC016N06NSATMA1
|
Infineon | 类似代替 | PG-TDSON-8 |
INFINEON BSC016N06NSATMA1 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 2.8 V
|
||
BSC028N06LS3GATMA1
|
Infineon | 类似代替 | PG-TDSON-8 |
INFINEON BSC028N06LS3GATMA1 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 1.7 V
|
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