Technical parameters/rated power: 63 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.014 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 63 W
Technical parameters/threshold voltage: 2.8 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 8A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 1300pF @50V(Vds)
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.1W (Ta), 63W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PG-TSDSON-8
External dimensions/length: 3.4 mm
External dimensions/width: 3.4 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: PG-TSDSON-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Motor Drive & Control, Synchronous rectification for AC-DC SMPS, Audio, Isolated DC-DC converters (telecom and datacom systems, industrial, power management, audio, electrical, communication and networking), Uninterruptable power supplies (UPS), Or-ing switches and circuit breakers in 48V systems, Power Management, Communications&Networking
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSZ150N10LS3GATMA1
|
Infineon | 类似代替 | PG-TSDSON-8 |
INFINEON BSZ150N10LS3GATMA1 晶体管, MOSFET, N沟道, 40 A, 100 V, 0.013 ohm, 10 V, 1.7 V 新
|
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