Technical parameters/number of channels: 2
Technical parameters/Input compensation drift: 1.90 µV/K
Technical parameters/conversion rate: 900 mV/μs
Technical parameters/gain bandwidth product: 2.20 MHz
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: QFN-10
External dimensions/length: 1.5 mm
External dimensions/width: 2 mm
External dimensions/height: 0.37 mm
External dimensions/packaging: QFN-10
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLV342IRUGR
|
TI | 类似代替 | QFN-10 |
低电压轨到轨输出CMOS运算放大器,带有关断 LOW-VOLTAGE RAIL-TO-RAIL OUTPUT CMOS OPERATIONAL AMPLIFIERS WITH SHUTDOWN
|
||
TLV342SIRUGRG4
|
TI | 类似代替 | QFN-10 |
低电压轨到轨输出CMOS运算放大器,带有关断 LOW-VOLTAGE RAIL-TO-RAIL OUTPUT CMOS OPERATIONAL AMPLIFIERS WITH SHUTDOWN
|
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