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Technical parameters/output current: 7mA @5V
Technical parameters/power supply current: 625 µA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 0.625 W
Technical parameters/common mode rejection ratio: 65 dB
Technical parameters/Input compensation drift: 2.00 µV/K
Technical parameters/bandwidth: 3 MHz
Technical parameters/conversion rate: 2.10 V/μs
Technical parameters/gain bandwidth product: 3 MHz
Technical parameters/Over temperature protection: No
Technical parameters/input compensation voltage: 500 µV
Technical parameters/input bias current: 1 pA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 3 MHz
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/Common Mode Rejection Ratio (Min): 65 dB
Technical parameters/power supply voltage: 2.7V ~ 16V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/length: 9.81 mm
External dimensions/width: 6.35 mm
External dimensions/height: 4.57 mm
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLV271ID
|
TI | 功能相似 | SOIC-8 |
TEXAS INSTRUMENTS TLV271ID 运算放大器, 单路, 3 MHz, 1个放大器, 2.4 V/µs, ± 1.35V 至 ± 8V, SOIC, 8 引脚
|
||
TLV272IDR
|
TI | 功能相似 | SOIC-8 |
BiMOS/BiCMOS 运算放大器，TLV/LMV 系列 ### 运算放大器，Texas Instruments
|
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