Technical parameters/power supply voltage (DC): 18.0 V
Technical parameters/power supply current: 4.5 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 0.5 W
Technical parameters/common mode rejection ratio: 70 dB
Technical parameters/Input compensation drift: 10.0 µV/K
Technical parameters/bandwidth: 3 MHz
Technical parameters/conversion rate: 13.0 V/μs
Technical parameters/gain bandwidth product: 3 MHz
Technical parameters/input compensation voltage: 800 µV
Technical parameters/input bias current: 50 pA
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/gain bandwidth: 3 MHz
Technical parameters/dissipated power (Max): 500 mW
Technical parameters/Common Mode Rejection Ratio (Min): 70 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industry, signal processing
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LF412CDR
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS LF412CDR 运算放大器, 双路, 3 MHz, 2个放大器, 13 V/µs, ± 3.5V 至 ± 18V, SOIC, 8 引脚
|
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