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Technical parameters/power supply voltage (DC): 19.0 V
Technical parameters/output current: ≤80 mA
Technical parameters/power supply current: 625 µA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/common mode rejection ratio: 72dB ~ 90dB
Technical parameters/Input compensation drift: 6.00 µV/K
Technical parameters/bandwidth: 2.00 MHz
Technical parameters/conversion rate: 3.40 V/μs
Technical parameters/gain bandwidth product: 1.8 MHz
Technical parameters/input compensation voltage: 900 µV
Technical parameters/input bias current: 4 pA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/Common Mode Rejection Ratio (Min): 65 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLE2062CD
|
National Semiconductor | 类似代替 | SOIC |
JFET 输入运算放大器，Excalibur TLE 系列 与早期系列的 JFET 输入放大器相比，Texas Instruments Excalibur 系列 BiFET 运算放大器具有显著改进。 TLE2060 系列是低功率 JFET 输入运算放大器，与早期 TL060 和 TL030 BiFET 系列相比，带宽加倍，但功耗无显著增加；此外，它们与 TL030/TL060 设备相比噪音更低。 与早期 TL070 和 TL080 系列相比，TLE2070 和 TLE2080 系列的带宽超过其两倍，转换速率是其三倍，且噪音级别更低。 它们还可在高达 ±19V 的更高电源电压下工作。 ### 运算放大器，Texas Instruments
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TLE2062CDR
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS TLE2062CDR 芯片, 运算放大器, JFET, 2MHZ, 2路, 8SOIC
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