Chip AI consultant
Technical parameters/power supply voltage (DC): 1.40V (min)
Technical parameters/output current: 20 mA
Technical parameters/power supply current: 0.3 mA
Technical parameters/number of channels: 2
Technical parameters/dissipated power: 500 W
Technical parameters/input compensation voltage: 5 mV
Technical parameters/input bias current: 0.005 nA
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 500 mW
Technical parameters/power supply voltage (Max): 16 V
Technical parameters/power supply voltage (Min): 1.4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLC352CP
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TI | 类似代替 | PDIP-8 |
TLC 系列 LinCMOS 比较器 ### 比较器，Texas Instruments Texas Instruments 系列电压比较器不仅包括传统单、双和四路比较器封装，还包括窗口比较器及过压和欠压监控器。 尽管比较器和运算放大器表面上是相似的设备，但它们在实用应用中的操作大大不同。 运算放大器适用于线性操作，附带适当反馈，而比较器定制用于快速切换且通常在开路模式中操作。 专用电压比较器具有明显较短的传播延迟，且可在饱和条件下具有更快的响应时间。 大多数比较器还更耐受高差分输入电压，且很多比较器具有开路集电极输出，从而可与其他设备并联操作。
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TLC372CD
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National Semiconductor | 类似代替 | SOIC |
TEXAS INSTRUMENTS TLC372CD 模拟比较器, 双路, 差分, 2, 200 ns, 3V 至 16V, SOIC, 8 引脚
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