Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0014 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 80 W
Technical parameters/threshold voltage: 1.55 V
Technical parameters/input capacitance: 5800 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 17.5 A
Technical parameters/rise time: 30.8 ns
Technical parameters/Input capacitance (Ciss): 5800pF @25V(Vds)
Technical parameters/rated power (Max): 4 W
Technical parameters/descent time: 47.8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 114W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerFLAT-5x6-8
External dimensions/length: 5 mm
External dimensions/width: 6 mm
External dimensions/height: 0.81 mm
External dimensions/packaging: PowerFLAT-5x6-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Power Management, Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD17312Q5
|
TI | 功能相似 | 8-VSON-CLIP |
30V N 通道 NexFET™ 功率 MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review