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Description Low Power J-FET Dual Operational Amplifier LOW POWER J-FET DUAL Operational AMPLIFIERS
Product QR code
Packaging SOIC-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(9999) Minimum order quantity(1)
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Technical parameters/power supply current: 200 µA

Technical parameters/number of circuits: 2

Technical parameters/dissipated power: 680 mW

Technical parameters/conversion rate: 3.50 V/μs

Technical parameters/gain bandwidth product: 1 MHz

Technical parameters/input compensation voltage: 3 mV

Technical parameters/input bias current: 30 pA

Technical parameters/operating temperature (Max): 70 ℃

Technical parameters/operating temperature (Min): 0 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.65 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: 0℃ ~ 70℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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