Technical parameters/power supply current: 1.4 mA
Technical parameters/number of circuits: 1
Technical parameters/dissipated power: 680 mW
Technical parameters/conversion rate: 13.0 V/μs
Technical parameters/gain bandwidth product: 4 MHz
Technical parameters/input compensation voltage: 3 mV
Technical parameters/input bias current: 20 pA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 680 mW
Technical parameters/Common Mode Rejection Ratio (Min): 80 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 105℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TL081IDT
|
ST Microelectronics | 类似代替 | SOIC-8 |
TL081 系列 36 V 4 MHz 通用 JFET 单 运算放大器-SOIC-8
|
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