Technical parameters/number of channels: 1
Technical parameters/dissipated power: 680 mW
Technical parameters/Input compensation drift: 18.0 µV/K
Technical parameters/bandwidth: 3.00 MHz
Technical parameters/conversion rate: 13.0 V/μs
Technical parameters/gain bandwidth product: 3 MHz
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 680 mW
Technical parameters/Common Mode Rejection Ratio (Min): 70 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TL081CDE4
|
TI | 完全替代 | SOIC-8 |
JFET输入运算放大器 JFET-INPUT OPERATIONAL AMPLIFIERS
|
||
TL081CDRG4
|
TI | 完全替代 | SOIC-8 |
JFET输入运算放大器 JFET-INPUT OPERATIONAL AMPLIFIERS
|
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