Technical parameters/number of channels: 1
Technical parameters/Input compensation drift: 18.0 µV/K
Technical parameters/bandwidth: 3.00 MHz
Technical parameters/conversion rate: 13.0 V/μs
Technical parameters/gain bandwidth product: 3 MHz
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 680 mW
Technical parameters/Common Mode Rejection Ratio (Min): 75 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TL071BCDG4
|
TI | 完全替代 | SOIC-8 |
低噪声JFET输入运算放大器 LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIERS
|
||
TL071BCDR
|
TI | 完全替代 | SOIC-8 |
低噪声JFET输入运算放大器 LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIERS
|
||
TL081BCDR
|
TI | 完全替代 | SOIC-8 |
运算放大器 - 运放 JFET-Input Oper Amplifier
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review