Technical parameters/dissipated power: 165W (Tc)
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1800pF @300V(Vds)
Technical parameters/descent time: 6 ns
Technical parameters/dissipated power (Max): 165W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP28N65M2
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ M2 系列,STMicroelectronics MDmesh M2 系列功率 MOSFET 非常适合用于谐振型电源(LLC 转换器)。 其配置具有低栅极电荷,以及极佳的输出电容。 ### MOSFET 晶体管,STMicroelectronics
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