Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 1000 @1A, 4V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP110
|
Central Semiconductor | 类似代替 | TO-220-3 |
TRANS NPN DARL 60V 2A TO-220AB
|
||
|
|
UTC | 类似代替 | TO-220 |
TRANS NPN DARL 60V 2A TO-220AB
|
||
|
|
NTE Electronics | 类似代替 |
TRANS NPN DARL 60V 2A TO-220AB
|
|||
|
|
CJ | 类似代替 | TO-220-3 |
TRANS NPN DARL 60V 2A TO-220AB
|
||
TIP110
|
ST Microelectronics | 类似代替 | TO-220-3 |
TRANS NPN DARL 60V 2A TO-220AB
|
||
|
|
Poinn | 类似代替 |
TRANS NPN DARL 60V 2A TO-220AB
|
|||
TIP110
|
Fairchild | 类似代替 | TO-220-3 |
TRANS NPN DARL 60V 2A TO-220AB
|
||
TIP110
|
Luguang Electronic | 类似代替 |
TRANS NPN DARL 60V 2A TO-220AB
|
|||
TIP111
|
Central Semiconductor | 功能相似 | TO-220-3 |
达林顿晶体管 NPN Pwr Darlington
|
||
TIP111
|
Fairchild | 功能相似 | TO-220-3 |
达林顿晶体管 NPN Pwr Darlington
|
||
TIP111
|
Comset Semiconductors | 功能相似 |
达林顿晶体管 NPN Pwr Darlington
|
|||
TIP111
|
Luguang Electronic | 功能相似 |
达林顿晶体管 NPN Pwr Darlington
|
|||
|
|
Harris | 功能相似 | TO-220AB |
达林顿晶体管 NPN Pwr Darlington
|
||
TIP111
|
ON Semiconductor | 功能相似 | TO-220-3 |
达林顿晶体管 NPN Pwr Darlington
|
||
|
|
ETC | 功能相似 |
达林顿晶体管 NPN Pwr Darlington
|
|||
|
|
Poinn | 功能相似 |
达林顿晶体管 NPN Pwr Darlington
|
|||
|
|
Inchange Semiconductor | 功能相似 |
达林顿晶体管 NPN Pwr Darlington
|
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