Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 25A
Technical parameters/minimum current amplification factor (hFE): 10 @15A, 4V
Technical parameters/rated power (Max): 125 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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UTC | 功能相似 | TO-3 |
Pnp Silicon Transistor
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UTC | 功能相似 | TO-3 |
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3P, 3 PIN
|
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TIP36CW
|
ST Microelectronics | 类似代替 | TO-247-3 |
互补硅大功率管 Complementary Silicon High Power Transistors
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