Technical parameters/dissipated power: 125000 mW
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 1000 @5A, 4V
Technical parameters/rated power (Max): 80 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 125000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Transys Electronics | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
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TIP147
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Comset Semiconductors | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
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CJ | 功能相似 | TO-220-3 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
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TIP147
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NTE Electronics | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
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TIP147
|
Multicomp | 功能相似 | TO-247 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
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||
|
|
Motorola | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
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Wings | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
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TIP147
|
ST Microelectronics | 功能相似 | TO-247-3 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
||
TIP147
|
Mospec | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
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TIP147
|
Poinn | 功能相似 |
达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors
|
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TIP147G
|
ON Semiconductor | 功能相似 | TO-247-3 |
ON SEMICONDUCTOR TIP147G 单晶体管 双极, PNP, -100 V, 125 W, -10 A, 500 hFE 新
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