Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 80 W
Technical parameters/gain bandwidth product: 3 MHz
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 20 @3A, 4V
Technical parameters/Maximum current amplification factor (hFE): 100
Technical parameters/rated power (Max): 80 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-218-3
External dimensions/length: 15.2 mm
External dimensions/width: 4.9 mm
External dimensions/packaging: TO-218-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 30
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP33C
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ON Semiconductor | 功能相似 | TO-218-3 |
Transistor Npn Silicon 100V Ic=10A To-247 Case General Purpose Power Amplifier
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Inchange Semiconductor | 功能相似 |
Transistor Npn Silicon 100V Ic=10A To-247 Case General Purpose Power Amplifier
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Bourns J.W. Miller | 功能相似 |
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TIP33C
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NTE Electronics | 功能相似 |
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TIP33C
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Mospec | 功能相似 |
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TIP33CG
|
ON Semiconductor | 功能相似 | TO-247-3 |
ON SEMICONDUCTOR TIP33CG 单晶体管 双极, NPN, 100 V, 3 MHz, 80 W, 10 A, 20 hFE 新
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Motorola | 功能相似 |
ON SEMICONDUCTOR TIP33CG 单晶体管 双极, NPN, 100 V, 3 MHz, 80 W, 10 A, 20 hFE 新
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TIP33CLEADFREE
|
Central Semiconductor | 功能相似 | TO-218 |
TO-218 NPN 100V 10A
|
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