Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 80.0 W
Technical parameters/breakdown voltage (collector emitter): 60.0 V
Technical parameters/maximum allowable collector current: 10A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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NJS | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
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ST Microelectronics | 功能相似 | SOT-93-3 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
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Poinn | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
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Mospec | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
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TIP33A
|
TI | 功能相似 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
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