Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 25 @1A, 4V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP32A
|
ST Microelectronics | 功能相似 | TO-220-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
TIP32A
|
ON Semiconductor | 功能相似 | TO-220-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
TIP32A
|
Fairchild | 功能相似 | TO-220-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
|
|
Central Semiconductor | 功能相似 | TO-220-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
TIP32A
|
Boca Semiconductor | 功能相似 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
|||
TIP32A
|
Poinn | 功能相似 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
|||
TIP32A
|
Multicomp | 功能相似 | TO-220 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
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