Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 30000 mW
Technical parameters/gain bandwidth product: 3 MHz
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 15 @1A, 4V
Technical parameters/rated power (Max): 30 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 30000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.02 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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TIP29A
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TIP29CG
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ON SEMICONDUCTOR TIP29CG. 射频双极晶体管
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