Technical parameters/dissipated power: 125000 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 1000 @5A, 4V
Technical parameters/rated power (Max): 80 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP146
|
ON Semiconductor | 功能相似 | SOT-93 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
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Poinn | 功能相似 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
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Inchange Semiconductor | 功能相似 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
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TIP146
|
ST Microelectronics | 功能相似 | TO-218-3 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
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|
NTE Electronics | 功能相似 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
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TIP146
|
Multicomp | 功能相似 | TO-247 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
||
|
|
Wings | 功能相似 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
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|
Transys Electronics | 功能相似 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
|||
TIP146
|
Fairchild | 功能相似 | TO-3 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
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