Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2000 mW
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 1000 @0.5A, 3V|1000 @3A, 3V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 功能相似 | TO-220 |
ON SEMICONDUCTOR 2N6045G. 达林顿双极晶体管
|
||
BDX53CG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR BDX53CG 单晶体管 双极, 达林顿, NPN, 100 V, 65 W, 8 A, 750 hFE
|
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