Technical parameters/dissipated power: 50 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/rated power (Max): 50 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.6 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.02 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP116-BP
|
Micro Commercial Components | 功能相似 | TO-220-3 |
双极晶体管 - 双极结型晶体管(BJT) 2.0A 80V
|
||
TIP116G
|
ON Semiconductor | 功能相似 | TO-220-3 |
塑料中功率互补硅晶体管 Plastic Medium-Power Complementary Silicon Transistors
|
||
TIP117 TIN/LEAD
|
Central Semiconductor | 功能相似 | TO-220-3 |
Trans Pn p 100V To220
|
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