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Model MMBTA13LT1

Description Darlington Amplifier Transistors (NPN Silicon)

Brand: ON Semiconductor

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	30.0 V
Technical parameters/rated current:	300 mA
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	225 mW
Technical parameters/breakdown voltage (collector emitter):	30 V
Technical parameters/Maximum allowable collector current:	0.3A
Technical parameters/minimum current amplification factor (hFE):	10000 @100mA, 5V
Technical parameters/rated power (Max):	225 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	2.9 mm
Dimensions/Width:	1.3 mm
Dimensions/Height:	0.94 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead
Customs information/ECCN code:	EAR99

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