Technical parameters/drain source resistance: | 1.5 mΩ |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Continuous drain current (Ids): | 120A |
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Technical parameters/rise time: | 10 ns |
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Technical parameters/Input capacitance (Ciss): | 11685pF @20V(Vds) |
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Technical parameters/descent time: | 12 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 375W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2000 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQM110N04-02L-GE3
|
Vishay Siliconix | 功能相似 | D2PAK |
MOSFET N-CH D-S 40V TO263
|
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