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Model SPW15N60C3FKSA1

Description INFINEON SPW15N60C3FKSA1 Power Field Effect Transistor, MOSFET, N-channel, 15 A, 600 V, 0.25 ohm, 10 V, 3 V

Brand: Infineon

Packaging TO-247

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	650 V
Technical parameters/rated current:	15.0 A
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.25 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	156 W
Technical parameters/threshold voltage:	3 V
Technical parameters/Input capacitance:	2.40 nF
Technical parameters/gate charge:	114 nC
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Continuous drain current (Ids):	15.0 A
Technical parameters/rise time:	5 ns
Technical parameters/Input capacitance (Ciss):	1660pF @25V(Vds)
Technical parameters/descent time:	5 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	156000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-247
Dimensions/Packaging:	TO-247
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Industrial, Power Management, Communication&Networking, Consumer Electronics, Consumer Electronics, Industrial, Communications& , Power Management, Industrial,
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC