Technical parameters/number of channels: | 2 |
|
Technical parameters/drain source resistance: | 24 mΩ |
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Technical parameters/polarity: | N-Channel, Dual N-Channel |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/threshold voltage: | 2.5 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30 V |
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Technical parameters/Continuous drain current (Ids): | 7.00 A |
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Technical parameters/rise time: | 10 ns |
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Technical parameters/Input capacitance (Ciss): | 600pF @10V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/descent time: | 11 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOP-8 |
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Dimensions/Packaging: | SOP-8 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SP8K3
|
ROHM Semiconductor | 功能相似 | SOT |
开关( 30V , 7.0A ) Switching (30V, 7.0A)
|
||
SP8K3TB
|
ROHM Semiconductor | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 30V 7A 8Pin SOP T/R
|
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