Technical parameters/rated voltage (DC): | 58.0 V |
|
Technical parameters/operating voltage: | 58 V |
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Technical parameters/rated power: | 600 W |
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Technical parameters/breakdown voltage: | 64.4 V|64.4 V |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/dissipated power: | 600 W |
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Technical parameters/clamp voltage: | 93.6 V |
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Technical parameters/Maximum reverse voltage (Vrrm): | 58V |
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Technical parameters/test current: | 1 mA |
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Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 64.4 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/operating temperature: | -55℃ ~ 150℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | SMB |
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Dimensions/Length: | 4.57 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 2.62 mm |
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Dimensions/Packaging: | SMB |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | General |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1SMB58CAT3G
|
ON Semiconductor | 功能相似 | SMB |
600W 齐纳 SMT 瞬态电压抑制器，1SMB 系列（双向） ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器，On Semiconductor
|
||
SMBJ58CA-E3/52
|
VISHAY | 类似代替 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W，Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻，带增量浪涌 ### 瞬态电压抑制器，Vishay Semiconductor
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