Technical parameters/breakdown voltage: | 135 V |
|
Technical parameters/number of circuits: | 1 |
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Technical parameters/number of pins: | 2 |
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Technical parameters/dissipated power: | 600 W |
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Technical parameters/clamp voltage: | 177 V |
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Technical parameters/test current: | 1 mA |
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Technical parameters/maximum reverse breakdown voltage: | 135 V |
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Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 122 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-214AA |
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Dimensions/Length: | 4.57 mm |
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Dimensions/Width: | 3.94 mm |
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Dimensions/Height: | 2.44 mm |
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Dimensions/Packaging: | DO-214AA |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Computers & Computer Peripherals, Sensing & Instrumentation, Automotive, Automotive, Lighting, Consumer Electronics, Communications& Networking, General, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ110CA-E3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 110V 600W 2Pin SMB T/R
|
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