Technical parameters/clamp voltage: | 177 V |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 110V |
|
Technical parameters/test current: | 1 mA |
|
Technical parameters/maximum reverse breakdown voltage: | 135 V |
|
Technical parameters/peak pulse power: | 600 W |
|
Technical parameters/minimum reverse breakdown voltage: | 122 V |
|
Technical parameters/breakdown voltage: | 122 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-214AA |
|
Dimensions/Length: | 5.59 mm |
|
Dimensions/Width: | 3.94 mm |
|
Dimensions/Height: | 2.44 mm |
|
Dimensions/Packaging: | DO-214AA |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Minimum Packaging: | 750 |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1SMB110AT3G
|
ON Semiconductor | 功能相似 | SMB |
600W 齐纳表面安装瞬态电压抑制器,1SMB 系列(单向) ### 瞬态电压抑制器,On Semiconductor
|
||
1SMB110AT3G
|
Littelfuse | 功能相似 | DO-214AA-2 |
600W 齐纳表面安装瞬态电压抑制器,1SMB 系列(单向) ### 瞬态电压抑制器,On Semiconductor
|
||
CD214B-T110ALF
|
Bourns J.W. Miller | 类似代替 | DO-214AA |
单向 110V
|
||
SMBJ110A-E3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 110V 600W 2Pin SMB T/R
|
||
SMBJ110AHE3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 110V 600W 2Pin SMB T/R
|
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