Technical parameters/operating voltage: | 10 V |
|
Technical parameters/breakdown voltage: | 12.3 V |
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Technical parameters/dissipated power: | 1 W |
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Technical parameters/clamp voltage: | 17 V |
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Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 11.1 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | DO-214AA-2 |
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Dimensions/Packaging: | DO-214AA-2 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Manufacturing Applications: | General |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ10CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA-2 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ10CA-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
|
|
VISHAY | 类似代替 | DO-214AA |
Diode TVS Single Bi-Dir 10V 600W 2Pin SMB T/R
|
||
SMBJ10CA-E3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA |
Diode TVS Single Bi-Dir 10V 600W 2Pin SMB T/R
|
||
SMBJ10CA-M3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA-2 |
ESD 抑制器/TVS 二极管 10V 800W Bidir TransZorb 5% Tol
|
||
|
|
VISHAY | 完全替代 | SMB |
ESD 抑制器/TVS 二极管 10V 800W Bidir TransZorb 5% Tol
|
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