Technical parameters/breakdown voltage: | 22.2 V |
|
Technical parameters/dissipated power: | 6.6 kW |
|
Technical parameters/clamp voltage: | 32.4 V |
|
Technical parameters/peak pulse power: | 6600 W |
|
Technical parameters/minimum reverse breakdown voltage: | 22.2 V |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | DO-218AB |
|
Dimensions/Packaging: | DO-218AB |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | General |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SM8S20AHE3/2D
|
Vishay Semiconductor | 类似代替 | DO-218AB |
VISHAY SM8S20AHE3/2D TVS Diode, SM8S Series, Unidirectional, 20V, 32.4V, DO-218AB, 2Pins
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review