Technical parameters/peak pulse power: | 6600 W |
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Technical parameters/minimum reverse breakdown voltage: | 11.1 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | DO-218AB |
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Dimensions/Packaging: | DO-218AB |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Automotive grade |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SM8S10HE3/2D
|
Vishay Semiconductor | 完全替代 | DO-218AB |
Diode TVS Single Uni-Dir 10V 6.6kW 2Pin DO-218AB T/R
|
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