Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/drain source voltage (Vds): | 15 V |
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Technical parameters/Leakage source breakdown voltage: | 15 V |
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Technical parameters/rated power (Max): | 200 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 200 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.5 mm |
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Dimensions/Height: | 1.1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | AM tuner RF amplifier, low-noise amplifier |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK932-22-TB-E
|
ON Semiconductor | 功能相似 | SOT-23-3 |
N 通道 JFET，ON Semiconductor ### JFET 晶体管 一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。
|
||
2SK932-22-TB-E
|
Sanyo Semiconductor | 功能相似 |
N 通道 JFET，ON Semiconductor ### JFET 晶体管 一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。
|
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