Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 450 V |
|
Technical parameters/Continuous drain current (Ids): | 20A |
|
Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 功能相似 | TO-3 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
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