Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.104 Ω |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 37 W |
|
Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 600 V |
|
Technical parameters/rise time: | 32 ns |
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Technical parameters/Input capacitance (Ciss): | 2600pF @100V(Vds) |
|
Technical parameters/descent time: | 36 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 37 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.63 mm |
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Dimensions/Width: | 4.83 mm |
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Dimensions/Height: | 16.12 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Packaging Methods: | Bulk |
|
Other/Manufacturing Applications: | LED Lighting, Portable Devices, Lighting, Computers & Computer Peripherals, Power Management, Communications & Networking, Motor Drive & Control, Industrial, Alternative Energy |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF30N60E-E3
|
Vishay Semiconductor | 完全替代 | TO-220 |
MOSFET 晶体管,Vishay Semiconductor
|
||
SIHF30N60E-E3
|
VISHAY | 完全替代 | TO-220-3 |
MOSFET 晶体管,Vishay Semiconductor
|
||
SIHF30N60E-E3
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET 晶体管,Vishay Semiconductor
|
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