Technical parameters/drain source resistance: | 0.063 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.9 W |
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Technical parameters/threshold voltage: | 1 V |
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Technical parameters/drain source voltage (Vds): | 12 V |
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Technical parameters/Continuous drain current (Ids): | 4.50 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SC-70 |
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Dimensions/Packaging: | SC-70 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIA910EDJ-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-70-6 |
VISHAY SIA910EDJ-T1-GE3 双路场效应管, MOSFET, 双N沟道, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV
|
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