Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 240 V |
|
Technical parameters/Continuous drain current (Ids): | 0.7A |
|
Technical parameters/rise time: | 22 ns |
|
Technical parameters/Input capacitance (Ciss): | 167pF @120V(Vds) |
|
Technical parameters/descent time: | 19 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 3300 mW |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SC-70 |
|
Dimensions/Packaging: | SC-70 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIA450DJ-T1-E3
|
VISHAY | 类似代替 | SC-70 |
MOSFET N-CH 240V 1.52A SC70-6
|
||
SIA450DJ-T1-E3
|
Vishay Intertechnology | 类似代替 | SC-70-6 |
MOSFET N-CH 240V 1.52A SC70-6
|
||
SIA450DJ-T1-E3
|
Vishay Siliconix | 类似代替 | SC-70-6 |
MOSFET N-CH 240V 1.52A SC70-6
|
||
SIA456DJ-T1-GE3
|
VISHAY | 功能相似 | SC-70-6 |
MOSFET N-CH 200V 2.6A SC70-6
|
||
SIA456DJ-T1-GE3
|
Vishay Semiconductor | 功能相似 | SC-70-6 |
MOSFET N-CH 200V 2.6A SC70-6
|
||
SIA456DJ-T1-GE3
|
Vishay Intertechnology | 功能相似 | PowerPAK-SC70-6 |
MOSFET N-CH 200V 2.6A SC70-6
|
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