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Model SI9945AEY-T1-E3
Description MOSFET, Power; Dual N; 60V; + 20V; 2.4W; SO-8; 75A (Continuous); -55℃
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9116) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.08 Ω

 

Technical parameters/dissipated power:

2.4 W

 

Technical parameters/Leakage source breakdown voltage:

60 V

 

Technical parameters/thermal resistance:

93℃/W (RθJA)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 175℃

 

Other/Product Lifecycle:

Obsolete

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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MOSFET S0-8 60V 3.7A 2.4W
PDF
SI9945AEY-T1-GE3 SI9945AEY-T1-GE3 Vishay Siliconix 功能相似 SO-8
Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
SI9945AEY-T1-GE3 SI9945AEY-T1-GE3 Vishay Semiconductor 功能相似
Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

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