Technical parameters/dissipated power: | 950mW (Ta) |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/dissipated power (Max): | 950mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SC-70-6 |
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Dimensions/Packaging: | SC-70-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Vishay Intertechnology | 功能相似 | SOT-363-6 |
SI1473DH-T1-GE3 P-channel MOSFET Transistor, 2.3A, 30V, 6Pin SOT-363
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