Technical parameters/drain source resistance: | 1.4 Ω |
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Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/dissipated power: | 250 mW |
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Technical parameters/threshold voltage: | 2.5 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 500 mA |
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Technical parameters/Input capacitance (Ciss): | 30pF @25V(Vds) |
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Technical parameters/rated power (Max): | 250 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SC-89-6 |
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Dimensions/Length: | 1.7 mm |
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Dimensions/Height: | 0.5 mm |
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Dimensions/Packaging: | SC-89-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2014/06/16 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1029X-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-89-6 |
Trans MOSFET N/P-CH 60V 0.305A/0.19A 6Pin SOT-563F T/R
|
||
|
|
Vishay Intertechnology | 类似代替 | SC-89-6 |
Trans MOSFET N/P-CH 60V 0.305A/0.19A 6Pin SOT-563F T/R
|
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