Technical parameters/rated power: | 42 W |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 42 W |
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Technical parameters/drain source voltage (Vds): | 800 V |
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Technical parameters/Continuous drain current (Ids): | 1.9A |
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Technical parameters/rise time: | 15 ns |
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Technical parameters/Input capacitance (Ciss): | 290pF @100V(Vds) |
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Technical parameters/rated power (Max): | 42 W |
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Technical parameters/descent time: | 18 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 42W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-251-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 2.41 mm |
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Dimensions/Height: | 6.22 mm |
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Dimensions/Packaging: | TO-251-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPU80R2K8CEAKMA1
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Infineon | 类似代替 | TO-251-3 |
800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS™ family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation.
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