Technical parameters/rise/fall time: | 40ns, 10ns |
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Technical parameters/output voltage: | 15 V |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/forward voltage: | 1.6 V |
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Technical parameters/input current: | 5 mA |
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Technical parameters/dissipated power: | 100 mW |
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Technical parameters/data rate: | 5.00 Mbps |
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Technical parameters/rise time: | 40 ns |
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Technical parameters/isolation voltage: | 4 kV |
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Technical parameters/forward current: | 10 mA |
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Technical parameters/input current (Min): | 5 mA |
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Technical parameters/forward voltage (Max): | 1.75 V |
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Technical parameters/forward current (Max): | 10 mA |
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Technical parameters/descent time: | 0.01 µs |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 100 mW |
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Technical parameters/power supply voltage: | 4.5V ~ 15V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Height: | 1.55 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Signal Processing, Motor Drive and Control, Computers and Computer Peripherals, Industrial, Signal Processing, Industrial, Sensing and Instrumentation, Communications& Networking, Sensing & Instrumentation, C Alternative material
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