Technical parameters/rise/fall time: | 10000 ns |
|
Technical parameters/peak wavelength: | 880 nm |
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Technical parameters/descent time (Max): | 10000 ns |
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Technical parameters/rise time (Max): | 10000 ns |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | T-1 |
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Dimensions/Packaging: | T-1 |
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Physical parameters/operating temperature: | -40℃ ~ 100℃ |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
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|||
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Siemens Semiconductor | 功能相似 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
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SFH303
|
Siemens AG | 功能相似 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
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SFH303-3
|
Siemens Semiconductor | 功能相似 |
Silicon NPN Phototransistor; with Daylight Filter
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