Technical parameters/forward voltage: | 950 mV |
|
Technical parameters/reverse recovery time: | 35 ns |
|
Technical parameters/forward current: | 3 A |
|
Technical parameters/Maximum forward surge current (Ifsm): | 125 A |
|
Technical parameters/forward voltage (Max): | 950 mV |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-201AD |
|
Dimensions/Packaging: | DO-201AD |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Each |
|
Other/Manufacturing Applications: | Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
UNI-ROYAL | 功能相似 | DO-27 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
||
1N5402G
|
LiteOn | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
||
|
|
Galaxy Semi-Conductor | 功能相似 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
|||
|
|
Shanghai Sunrise Electronics | 功能相似 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
|||
1N5402G
|
DC Components | 功能相似 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
|||
1N5402G
|
Taiwan Semiconductor | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
||
1N5402G
|
Bytes | 功能相似 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
|||
1N5402G
|
ON Semiconductor | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review