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Description RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RF Power Transistor LdmoST N-ch Plastic
Product QR code
Packaging M-177
Delivery time
Packaging method Tray
Standard packaging quantity 1
0yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6269) Minimum order quantity(1)
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Technical parameters/frequency:

30 MHz

 

Technical parameters/dissipated power:

648 W

 

Technical parameters/output power:

300 W

 

Technical parameters/gain:

23.5 dB

 

Technical parameters/test current:

250 mA

 

Technical parameters/Input capacitance (Ciss):

1000pF @50V(Vds)

 

Technical parameters/operating temperature (Max):

200 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

648000 mW

 

Technical parameters/rated voltage:

125 V

 

Package parameters/number of pins:

5

 

Encapsulation parameters/Encapsulation:

M-177

 

Dimensions/Packaging:

M-177

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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