Technical parameters/frequency: | 400 MHz |
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Technical parameters/rated voltage (DC): | 65.0 V |
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Technical parameters/rated current: | 900 mA |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 21.9 W |
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Technical parameters/Input capacitance: | 8.50 pF |
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Technical parameters/drain source voltage (Vds): | 65.0 V |
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Technical parameters/Leakage source breakdown voltage: | 65.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 900 mA |
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Technical parameters/output power: | 5 W |
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Technical parameters/gain: | 16 dB |
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Technical parameters/test current: | 50 mA |
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Technical parameters/rated voltage: | 65 V |
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Encapsulation parameters/installation method: | Screw |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | M113 |
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Dimensions/Packaging: | M113 |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Box |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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M/A-Com | 功能相似 | Screw |
射频MOSFET功率晶体管， 5W ， 28V 2 - 175兆赫 RF MOSFET Power Transistor, 5W, 28V 2 - 175 MHz
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