Technical parameters/rated voltage (DC): | 110 V |
|
Technical parameters/rated current: | 40.0 A |
|
Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 330 W |
|
Technical parameters/output power: | 200 W |
|
Technical parameters/breakdown voltage (collector emitter): | 55 V |
|
Technical parameters/gain: | 15dB ~ 17dB |
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Technical parameters/minimum current amplification factor (hFE): | 23 @10A, 6V |
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Technical parameters/rated power (Max): | 330 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 330000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 5 |
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Encapsulation parameters/Encapsulation: | M-177 |
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Dimensions/Packaging: | M-177 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | TO-220 |
10安培肖特基势垒整流器 10 AMP SCHOTTKY BARRIER RECTIFIERS
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||
|
|
ST Microelectronics | 功能相似 |
Trans RF BJT NPN 55V 40A 5Pin Case M-177 Tray
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