CSD18533KCS In Stock|PDF|Datasheet|Price|Agent[CSD18533KCS Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model CSD18533KCS

Description 60V N Channel NexFET ™ Power MOSFET

Brand: TI

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

Technical parameters/number of channels:	1
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.005 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	160 W
Technical parameters/threshold voltage:	1.9 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	114A
Technical parameters/rise time:	4.8 ns
Technical parameters/Input capacitance (Ciss):	3025pF @30V(Vds)
Technical parameters/rated power (Max):	160 W
Technical parameters/descent time:	3.2 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	192W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.67 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	16.51 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Supply in progress
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/06/15