Technical parameters/rated voltage (DC): | 36.0 V |
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Technical parameters/rated current: | 20.0 A |
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Technical parameters/dissipated power: | 270 W |
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Technical parameters/breakdown voltage (collector emitter): | 18 V |
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Technical parameters/gain: | 13 dB |
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Technical parameters/minimum current amplification factor (hFE): | 20 @5A, 5V |
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Technical parameters/maximum current amplification factor (hFE): | 300 |
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Technical parameters/rated power (Max): | 270 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | M174 |
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Dimensions/Length: | 24.89 mm |
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Dimensions/Width: | 12.83 mm |
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Dimensions/Height: | 7.11 mm |
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Dimensions/Packaging: | M174 |
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Physical parameters/operating temperature: | 200℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | M-174 |
RF Power Bipolar Transistor, 1Element, High Frequency Band, Silicon, NPN, 0.5INCH, PLASTIC, M174, 4Pin
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